| 摘要 |
The present invention provides a semiconductor diffusion region structure of a first conductivity type in an upper region of a semiconductor substrate of a second conductivity type, wherein the semiconductor diffusion region structure comprises: a main portion, at least a part of which is electrically connected to an electrically conductive film structure; and an extending portion which underlies a gate insulating film underlying a gate electrode layer which is also electrically connected to the electrically conductive film structure, so that an adjacent potion of the semiconductor substrate to an edge of the extending portion of the semiconductor diffusion region structure is distanced from the electrically conductive film structure whereby the semiconductor diffusion region structure is electrically isolated from the semiconductor substrate.
|
