| 摘要 |
PURPOSE: A semiconductor etcher is provided to prevent an etch stop phenomenon caused by C-F based polymer in a plasma etch process and to form a narrow and deep contact hole, by increasing etch selectivity of a SiO2 layer to a Si3N4 layer. CONSTITUTION: A wafer is induced to a chamber. A radical source supplies a radical to the inside of the chamber. A beam source supplies an ion beam or plasma to the inside of the chamber. A wafer stage supports and fixes the wafer induced to the inside of the chamber. A neutralizer neutralizes charges inside the chamber such that the charges are ionized by the ion beam, plasma or radical.
|
