| 摘要 |
PURPOSE: Provided is a method for modifying a radius of curvature close to the surface for prescribing a trench in a semiconductor device, more specifically, in a trench having a round corner like element isolation or the like, and in a semiconductor material layer. CONSTITUTION: An opening extending to an upper surface is formed in a layer having a wall portion from the upper surface to a lower surface. An intersection point between the wall portion and the upper surface prescribes the first corner area along the wall portion and the upper surface. To enhance rate of oxidation in material along the wall portion with respect to semiconductor material in the other layer, material such as oxygen, silicon, argon, helium is obliquely ion implanted.
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