METHOD FOR FORMING FERROELECTRIC MEMORY DEVICE CAPABLE OF PREVENTING OXIDATION OF LOWER ELECTRODE

摘要

PURPOSE: A method for forming a ferroelectric memory device capable of preventing oxidation of a lower electrode is provided to control an increase of contact resistance, by preventing a plug polysilicon layer from being oxidized. CONSTITUTION: A ferroelectric layer(24) is formed on the lower electrode(23). The first heat treatment process is performed in an activated plasma state and in an oxygen atmosphere to induce oxygen to the inside of the ferroelectric layer. The second heat treatment process is performed in a nitrogen atmosphere to crystallize the ferroelectric layer. An upper electrode(25) is formed on the ferroelectric layer.