发明名称 METHOD FOR FABRICATING RETICLE
摘要 PURPOSE: A method for fabricating a reticle is provided to save time and cost by fabricating a sample for analyzing basic physical properties and a sample for analyzing an electrical characteristic in the same wafer, and to find out a reason of an accident through a basic physical property analysis in an electrical characteristic analysis by eliminating a physical property difference between the samples. CONSTITUTION: The reticle of a test wafer is fabricated to analyze a physical property of a stacked metal layer. A plurality of patterns are formed in one field region(10) of a die. Chrome is applied on the entire region of a die. The dies are fabricated simultaneously. A photoresist layer without a pattern is applied on the chrome-processes die.
申请公布号 KR20020017854(A) 申请公布日期 2002.03.07
申请号 KR20000051369 申请日期 2000.08.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, DEOK WON
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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