Production of a semiconductor arrangement used in the production of a luminescent diode of the p-configuration comprises forming a semiconductor layer made of n-conducting gallium aluminum arsenide between other semiconductor layers

摘要

Production of a semiconductor arrangement (1) comprises: (i) forming a first semiconductor n-conducting contact layer (S1); (ii) forming a second n-conducting sleeve layer (S2); (iii) forming a third active p-conducting semiconductor layer (S3); and (iv) forming a fourth p-conducting sleeve and/or contact semiconductor layer (S4). Doping of the second layer is raised so that compensation or transition of the conducting type by carbon contamination is avoided. A further semiconductor layer (S5) made of n-conducting gallium aluminum arsenide is produced between second and third layers. Preferred Features: The charge carrier concentration of the further semiconductor layer is adjusted to 1 x 10<17> - 3 x 10<17> cm<-3>. The further semiconductor layer has a thickness of 2-20, preferably 5-10 mu m. The dopant for the further semiconductor layer is tellurium.