| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent thermal stress in a corner portion of a chip and to improve reliability of a guard ring and a wire ring, by making the length of a slit formed in the guard ring extend to the corner portion of the chip. CONSTITUTION: An insulation layer is formed on a semiconductor substrate. The insulation layer is selectively etched to form a via hole exposing a predetermined portion of the semiconductor substrate. A bonding pad connected to the semiconductor substrate is formed through the via hole. The guard ring(21) is formed along the edge of the semiconductor substrate, separated from the bonding pad by a predetermined interval. The respective corner portions of the guard ring is selectively etched to form the slit(22a,22b,22c) having the same line width and interval, wherein the length of the slit becomes shorter as it goes farther from the corner portion. A passivation layer is formed on the entire surface including the guard ring having the slit.
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