| 摘要 |
PURPOSE: A method for forming a contact in a semiconductor device is provided to improve reliability and properties of devices by forming fine contact using an additional pad mask. CONSTITUTION: A word line, a junction region and the first insulating spacer are sequentially formed on a semiconductor substrate. The second insulating layer is formed on the resultant structure and the second insulating layer is formed so as to planarize the resultant structure. A pad thin film is formed on the third insulating layer in order to overlap the word line. After forming a photoresist pattern on the resultant structure, a contact hole(27) is formed to expose the junction region using the photoresist pattern and the pad thin film as a mask. A conductive layer(29) is formed to contact the junction region via the contact hole(27). At the time, conductive material having a high etching selectivity compared to the insulating layer, is used as the pad thin film.
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