FOCUS MONITORING METHOD OF EXPOSURE EQUIPMENT AND RETICLE

摘要

PURPOSE: A focus monitoring method of exposure equipment is provided to precisely monitor the best focus of the exposure equipment, by forming a focus monitoring mask pattern in the periphery of a reticle and by analyzing a monitoring pattern formed on a photoresist layer. CONSTITUTION: A wafer on which photoresist(20) is applied is loaded to a wafer stage of the exposure equipment. An alignment process having the best focus point is performed regarding the surface of the wafer by auto focusing. An exposure process is performed regarding the photoresist on the wafer through an exposure mask where the focus monitoring pattern is formed. A photoresist pattern generated by a constructive interference of diffraction light through the focus monitoring pattern is monitored so that a focused state is monitored.