| 发明名称 |
Method for forming an isolation trench in a SOI substrate |
| 摘要 |
<p>In a semiconductor layer (203) formed on a first insulating film (204) is formed an element isolation groove extending to the first insulating film. Thereafter, a second insulating film (209) is deposited in the element isolation groove by using a vapor deposition method. <IMAGE></p> |
| 申请公布号 |
EP1184902(A1) |
申请公布日期 |
2002.03.06 |
| 申请号 |
EP20010120911 |
申请日期 |
2001.08.30 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ARITA, KOJI;UEMOTO, YASUHIRO |
| 分类号 |
H01L21/02;H01L21/76;H01L21/762;H01L27/08;H01L27/12;(IPC1-7):H01L21/762;H01L21/763 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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