SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a semiconductor body ( 1 ) which is provided at a surface ( 2 ) with a non-volatile memory cell comprising a source ( 3 ) and a drain ( 4 ), and an access gate ( 14 ) which is electrically insulated from a gate structure ( 8 ) comprising a control gate ( 9 ), the gate structure ( 8 ) being electrically insulated from the semiconductor body ( 1 ) by a gate dielectric ( 11, 25 ). The gate dielectric ( 11, 25 ) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate ( 14 ) has a substantially flat surface portion ( 17 ) extending substantially parallel to the surface ( 2 ) of the semiconductor body ( 1 ) and has the shape of a block which is disposed against the gate structure ( 8 ) without overlapping the gate structure.