IGBT PROCESS USING PLATINUM FOR LIFETIME CONTROL

摘要

A process for making a MOS-type insulated gate controlled power switching device (10) is characterized by the formation of an insulated gate contact layer (30) and a source contact layer (28) patterned to form a plurality of complementary, parallel, interdigitated gate and source fingers (116A,118), a gate bus (113,114) interconnecting the gate fingers (116A), and at least one source bus and pad (117, 116) connected to the source fingers (118). Body regions (22) are spaced across a drain region (20) at a first lateral spacing L1 beneath the gate fingers (116A) and at a second spacing L2 greater than the first spacing L1 beneath the gate bus (113, 114). The body regions (22) form a breakdown prone region beneath the gate bus (113,114) and the process further includes doping a portion of the breakdown prone region.