| 摘要 |
PURPOSE: A method for forming a dielectric layer is provided to reduce a thermal budget regarding a lower electrode and a barrier metal in forming a BST thin film as the dielectric layer on the lower electrode, by using boron alkoxide as a sintering additive so that the phase formation of the BST thin film is induced at a low temperature in a heat treatment process. CONSTITUTION: When the dielectric layer is formed by a sintering method, a boron-based sintering additive is added to a source for forming the dielectric layer by a predetermined mole percent so that the dielectric layer is formed at a low temperature. One of BST£(Ba,Sr)TiO3|, STO£SrTiO3|, BTO£BaTiO3| or PLT£(Pb,La)TiO3| is selected as the dielectric layer.
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