发明名称 Semiconductor device and manufacturing method thereof
摘要 When a first semiconductor chip is installed on a circuit substrate by using an anisotropic conductive bonding agent, one portion thereof is allowed to protrude outside the first semiconductor chip. A second semiconductor chip is installed on the first semiconductor chip and a support portion formed by the protruding resin. The protruding portion of the second semiconductor chip is supported by the support portion from under. Thus, in a semiconductor device having a plurality of laminated semiconductor chips in an attempt to achieve a high density, even when, from a semiconductor chip stacked on a circuit substrate, one portion of a semiconductor chip stacked thereon protrudes, it is possible to carry out a better wire bonding process on electrodes formed on the protruding portion.
申请公布号 US6353263(B1) 申请公布日期 2002.03.05
申请号 US20000517510 申请日期 2000.03.02
申请人 SHARP KABUSHIKI KAISHA 发明人 DOTTA YOSHIHISA;SAZA YASUYUKI;TAMAKI KAZUO
分类号 H01L23/12;H01L21/56;H01L21/98;H01L23/31;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/12
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