Process for lift-off of a layer from a substrate

摘要

Process for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separative interlayer comprises a thin quasi-continuous gaseous layer and said interlayer is obtained by gettering a monatomic hydrogen into a preformed buried defect-rich layer preferably obtained by implantation. The monatomic hydrogen is preferably inserted into the substrate by electrolytic means.