| 摘要 |
A semiconductor integrated circuit device having a port functioning as at least one of an input port and an output port, and can operates at high speed is provided. The port is divided into a first region in which a voltage of 3V is applied to the gate electrode and a second region in which a voltage of 3V or 5V is applied to the gate electrode. The thickness of gate oxide film of a MOS field effect transistor located in the first region is designed to be relatively small. The thickness of gate oxide film of a MOS field effect transistor located in the second region is designed to be relatively large. The regions operating at a voltage of 3V (the first region) and the regions operating at a voltage of 3V or 5V (the second region) are regularly divided.
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