| 摘要 |
A data outputting circuit for semiconductor memory device, comprising a pre-charging unit, a data pre-sensing unit made up of a first sense amplifier, a second sense amplifier and an inverter, a data sense amplifier and an output buffer. The data pre-sensing unit is respectively coupled to a position in a first data line having one half loading and a position in a second data line having one half loading. One of the respective signals of the first data line and the second data line is amplified and the other of the respective signals is maintained after passing through the data pre-sensing unit. Thereby, the signal difference between the first data line and the second data line is amplified by means of the data pre-sensing unit and is sufficient to facilitate sensing of the data sense amplifier, even though there exists large loading both in the first data line and the second data line.
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