| 发明名称 |
Controllable oxidation technique for high quality ultrathin gate oxide formation |
| 摘要 |
A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (~12 Angstroms) high quality oxide (14).
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| 申请公布号 |
US6352941(B1) |
申请公布日期 |
2002.03.05 |
| 申请号 |
US19990349625 |
申请日期 |
1999.07.08 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HWANG MING;TINER PAUL;HATTANGADY SUNIL |
| 分类号 |
H01L21/302;H01L21/28;H01L21/3065;H01L21/316;H01L21/336;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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