发明名称 Semiconductor device and method of manufacturing the same
摘要 A first semiconductor chip is produced by affixing a thermo-compression sheet to the back surface of a wafer having a circuit formed on its front surface. The first semiconductor chip is mounted on a circuit board including an insulating substrate and a wiring layer provided on the insulating substrate so that the back surface of the first semiconductor chip faces the circuit board. A second semiconductor chip produced in the same manner as the first semiconductor chip is mounted on the first semiconductor chip with its back surface facing the first semiconductor chip. Each of the first and second semiconductor chips is wire-bonded to the wiring layer with a wire. The first and second semiconductor chips and the wire are sealed with a sealing resin. The wiring layer is connected to external connection terminals through via holes provided in the insulating substrate.
申请公布号 US6352879(B1) 申请公布日期 2002.03.05
申请号 US20000604081 申请日期 2000.06.27
申请人 SHARP KABUSHIKI KAISHA 发明人 FUKUI YASUKI;SOTA YOSHIKI;MATSUNE YUJI;NARAI ATSUYA
分类号 H01L25/18;H01L21/56;H01L21/98;H01L23/31;H01L23/48;H01L23/52;H01L25/065;H01L25/07;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L25/18
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