| 摘要 |
A process of manufacturing a semiconductor device comprising: a step of forming an interlayer insulating film so as to cover a plurality of semiconductor elements formed on a semiconductor substrate, a step of forming openings in predetermined regions of the interlayer insulating film on the semiconductor elements in a manner of penetrating only halfway through the interlayer insulating film, a dual damascene step of forming contact hole by removing the interlayer insulating film remaining under the predetermined ones of the openings, thereby forming simultaneously openings for burying a wiring layer which include upper portions of the predetermined openings, a step of forming a conductive layer on the interlayer insulating film to fill at least the contact holes and the openings for burying the wiring layer; and a step of forming contact plugs and a buried wiring layer by removing the conductive layer on the interlayer insulating film.
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