发明名称 |
Method of removing photoresist and reducing native oxide in dual damascene copper process |
摘要 |
A method of manufacturing metallic interconnects. A substrate has a copper line formed therein. An inter-metal dielectric layer is formed over the substrate and the copper line. A patterned photoresist layer is formed over the inter-metal dielectric layer. The inter-metal dielectric layer is etched to form a trench and a contact opening that exposes a portion of the copper line, wherein the contact opening is under the trench. At a low temperature and using a plasma derived from a gaseous mixture N2H2 (H2:4%)/O2, the photoresist layer is removed. Any copper oxide layer formed on the copper line in the process of removing photoresist material is reduced back to copper using gaseous N2H2 (H2:4%). A barrier layer conformal to the trench and the contact opening profile is formed. Copper is deposited to form a conformal first copper layer over the trench and the contact opening. Using the first copper layer as a seeding layer, a copper or a copperless electroplating is carried out so that a second copper layer is grown anisotropically over the first copper layer.
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申请公布号 |
US6352938(B2) |
申请公布日期 |
2002.03.05 |
申请号 |
US19990457561 |
申请日期 |
1999.12.09 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN TONG-YU;CHUANG HSI-TA;YANG CHAN-LON |
分类号 |
H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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