Semiconductor device enabling high-speed generation of internal power-supply potential at the time of power on

摘要

A voltage generating circuit includes a primary reference potential signal generating circuit and a reference potential signal generating circuit, respectively generating a primary reference potential signal and a reference potential signal, and further includes an active VDC controlling a potential level of an internal power-supply potential Vcc1 based on the reference potential signal. First and second activation control circuits respectively activate control signals ALV1 and ALV2, for rapidly operating the voltage generating circuit, for a period from an activation of an external power-supply until the primary reference potential signal and the reference potential signal reach a predetermined value. The first and second activation control circuits detect the activation of the external power-supply, without the primary reference potential signal and the reference potential signal.