| 发明名称 |
Merged bipolar and CMOS circuit and method |
| 摘要 |
A method for fabricating a BiCMOS integrated circuit. The method includes the steps of forming in a single implantation step a base region 211 of a bipolar transistor and a p-well 212 of an n-channel MOS transistor; and forming in a single implantation step a collector contact well 213 of a bipolar transistor and an n-well 208 of a p-channel MOS transistor.
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| 申请公布号 |
US6352887(B1) |
申请公布日期 |
2002.03.05 |
| 申请号 |
US19990276780 |
申请日期 |
1999.03.25 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HUTTER LOUIS N.;YING PETER;CORSI MARCO;KHAN IMRAN |
| 分类号 |
H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;(IPC1-7):H01L21/823;H01L21/824;H01L21/822;H01L21/331 |
主分类号 |
H01L21/8222 |
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