| 摘要 |
A method of fabricating a direct contact through hole type wafer. Devices and contact plugs are formed in one side of a silicon-on-insulator substrate, and multilevel interconnects are formed over the side of the silicon-on-insulator substrate. The multilevel interconnects are coupled with the devices and the contact plugs. Bonding pads, which couples with the multilevel interconnects, are formed over the multilevel interconnects. An opening is formed on the other side of the silicon-on-insulator substrate to expose the contact plugs. An insulation layer, a barrier layer and a metal layer are formed in sequence in the opening. Bumps are formed on the bonding pads and the metal layer, respectively.
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