| 摘要 |
PURPOSE: A method for manufacturing a high integrated thin film transistor is provided to be capable of simplifying manufacturing processes and preventing variation of channel length due to misalignment. CONSTITUTION: An oxide layer(2), a gate electrode(3) and a gate oxide layer(4) are sequentially stacked on a semiconductor substrate(1). After depositing a polysilicon layer(5) for a source/drain on the resultant structure, ion-implantation and annealing are sequentially carried out. After coating a photoresist layer on the resultant structure, the photoresist layer and the polysilicon layer(5) are simultaneously etched so as to remain the polysilicon layer(5) on the gate electrode(3). A channel region and an LDD region are then formed in the polysilicon layer(5).
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