| 摘要 |
PURPOSE: A method for forming a junction in a semiconductor device is provided to easily obtain shallow junction by implanting lightly doped impurities after implanting heavily doped impurities. CONSTITUTION: After forming a gate oxide layer(12) and a gate electrode(13) on a substrate(11), a thermal oxide layer(14) is formed on the resultant structure. After forming a nitride spacer(15) at both sidewalls of the gate electrode, the first heavily doping region(16) is formed in the substrate. After removing the nitride spacer(15), a photoresist pattern(17) is formed to expose the first heavily doping region(16) of a drain electrode. Then, a lightly doping region(18) is formed in the substrate. A liquid phase oxide layer(19) is formed on the portion being not exist the photoresist pattern(17), and then the photoresist pattern is removed. The second heavily doping region(20) is formed using the liquid phase oxide layer as an implantation stopper.
|
