发明名称 POWER DETECTOR USING FET TRANSISTOR
摘要 PURPOSE: Power detector using FET transistor is provided to realize a technique for detecting the power of a RF signal with a circuitry using a FET transistor and a method for detecting the power of a RF signal, which technique is compatible with a differential operating mode. CONSTITUTION: As shown fig 1, The transistor(1) is connected in parallel to the RF power line feed(2). The transistor(1) is isolated from the RF input terminals(2,2') by a high pass filter capacitor C1(3). Theoretically a low pass filter is placed between the transistor(1) and the output circuit RLoad(4) and C3(5) but, due to technology constraints, the filter is been replaced by a resistor R1(6) whose resistance is greater than the resistance of the drain-source resistor. The RF signal(7) flows through the transistor(1). It's DC current is collected at outputs(13,13') detecting the voltage drop over a load resistance RLoad(4). The capacitor C3(5) is used as a shunt element for the remaining harmonics of the RF signal(7).
申请公布号 KR20020016578(A) 申请公布日期 2002.03.04
申请号 KR20010051304 申请日期 2001.08.24
申请人 SONY CORPORATION;SONY INTERNAT EUROP GMBH 发明人 ABE MASAYOSHI;BRANKOVIC VESELIN;KRUPEZEVIC DRAGAN;RATNI MOHAMED;SASHO NOBORU
分类号 G01R21/01;G01R21/10;G01R27/28;(IPC1-7):G01R27/28 主分类号 G01R21/01
代理机构 代理人
主权项
地址