| 摘要 |
PURPOSE: An Invar material for a shadow mask is provided to form uniform size openings during etching and accomplish less etching variation. CONSTITUTION: An Invar material for a shadow mask is determined whether it has preferred etching characteristic before actual etching by establishing conditions for coefficients of texture. The Invar material is determined to have the preferred etching characteristic when, the coefficients of texture, R=I(200)/£I(111)+I(220)+I(200)| is between 0.4 and 0.7 and F=I(111)/£I(111)+I(220)+I(200)| is between 0.2 ad 0.3, where I(111) is diffraction intensity of a (111) plane, I(200) is diffraction intensity of a (200) plane and I(220) is diffraction intensity of a (220) plane. The diffraction intensities are measured for the (111), (200) and (220) planes, respectively, by a Shurtz reflecting method using 3 kW CuKa X-ray vertically to an Invar alloy thin film surface.
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