| 摘要 |
PURPOSE: A flash memory device is provided to prevent contaminant from being diffused to a floating gate of a gate pattern even when a passivation layer near the gate pattern is damaged by contact misalign, by forming a silicon nitride layer spacer on the sidewall of the gate pattern. CONSTITUTION: The gate pattern is composed of a gate insulation layer, a floating gate layer, a dielectric layer(5) and a control gate layer which are stacked on an active region isolated by a field insulation layer. The silicon nitride layer sidewall spacer(22) is formed on the sidewall of the gate pattern. The passivation layer(15) made of a silicon nitride layer is formed on the gate pattern and the sidewall spacer.
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