| 摘要 |
PURPOSE: A method for manufacturing DRAM(Dynamic Random Access Memory) cells is provided to be capable of increasing capacitance by enhancing the area of a dielectric film. CONSTITUTION: After sequentially depositing an insulating layer(21), a nitride layer(22), the first polysilicon layer and the first oxide layer on a lower layer having a transistor, a node contact hole is formed by selectively etching the resultant structure. A polysilicon pillar(25') as a storage electrode is formed by depositing the second polysilicon layer and patterning the second polysilicon layer. The first spacer made of oxide is formed at both sidewalls of the polysilicon pillar(25'), and the second spacer made of polysilicon is formed at the both sidewalls of the first spacer so as to connect the first polysilicon layer, thereby forming a lower electrode(29). By removing the first oxide layer and the first spacer, the upper and lower surface and the sides of the polysilicon pillar are exposed. A dielectric film(32) and an upper electrode(33) are sequentially formed on the exposed lower electrode.
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