| 摘要 |
The invention concerns a semiconductor optical amplifier comprising at least two amplifying sections (30, 40), each providing, respectively, a higher gain of the TE mode and of the TM mode of the polarisation of the light to be amplified, said sections including each an active guide structure (12) having the same thickness (e). The invention is characterised in that the active guide structure (12) of the two sections (30, 40) is respectively subjected to strains of different tension and/or has a different geometrical shape so as to make the global gain of the amplifier insensitive to the polarisation of said light to be amplified, and the transition between the different sections (30, 40) has continuity of effective refraction indices. |
