Semiconductor device for electric power control, comprising insulator substrate with front-face circuit pattern and rear-face metallic pattern fastened by soldering on metal base

摘要

The device comprises a base plate of metal and at least an insulator substrate (2) comprising an insulator plate (3) with a rear-face pattern (5), and two front-face patterns (4) each in the form of letter L extending parallel to the two sides of the insulator plate. The rear-face pattern (5) is fastened on the base plate by a layer of solder (9). The two front-face patterns are laid out in a centrally symmetric manner and enclose the zones of switching elements (6) which are insulated-gate bipolar transistors (IGBTs) between zones of free-wheel diodes (FWDs) and electrodes. The device comprises two switching elements and two free-wheel diodes laid out in a draught board pattern between two auxiliary electrodes placed along opposite sides of the insulator plate. The insulator plate (3) is of ceramics, the rear-face pattern (5) and the front-face patterns (4) are of copper or aluminium, and the base plate is of copper or aluminium. The switching element zone (6) has a rectangular form of side length greater than 14 mm and is placed in an area 25mm in radius on the front face of the insulator substrate. A temperature sensor is placed on the switching device at a corner, or near the corner (5a) of the rear-face pattern.