发明名称 |
Multilayer film structure with high tunneling magneto-resistance ratio and the manufacturing method of the same |
摘要 |
This specification disclosed a multilayer film structure of a tunneling magneto-resistor and the manufacturing of the same, the structure being able to increase the tunneling magneto-resistance (TMR) ratio and to decrease the difficulty in manufacturing. The multilayer film structure disclosed herein forms, in a three-layer film structure composed of two layers of ferromagnetic films and an insulating layer provided in between, a layer of moderately thick ferromagnetic metal insertion between one of the ferromagnetic film and the insulating layer. Through the insertion the tunneling magneto-resistance ratio can be greatly increased and the thickness of the insulating layer is increased to the range where the manufacturing difficulty is lowered.
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申请公布号 |
US2002025619(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20000745154 |
申请日期 |
2000.12.19 |
申请人 |
LO CHI-KUEN;HO CHIA-HWO;LIN MINN-TSONG;YAO YEONG-DER;HUANG DER-RAY |
发明人 |
LO CHI-KUEN;HO CHIA-HWO;LIN MINN-TSONG;YAO YEONG-DER;HUANG DER-RAY |
分类号 |
B32B7/02;B32B15/04;H01L27/08;(IPC1-7):H01L21/823 |
主分类号 |
B32B7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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