Non-volatile semiconductor memory device configured toread control data at high speed

摘要

A non-volatile semiconductor memory device includes two-dimensional memories, pluralities of word line, pluralities of bit line, and a reading circuit. At least two bit data are memorized at each other memory in the two-dimensional memory cells. The pluralities of bit line lie at right angle to the word lines. The reading circuit can read certain data every (n-1) (n is an integer that is greater than one) memory cell regarding to a memory cell array that is connecting to at least a word line. The memory cell exists on the point of intersection with the word line and the bit line. Then data reading and data writing are made by applying the voltage on the word line and the bit line. The non-volatile semiconductor memory device is electrically rewritable.