Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof

摘要

A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P-SiO film, P-SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.