METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHO OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.