发明名称 |
MAGNETIC RANDOM ACCESS MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a large-capacity non-volatile memory of less noise occurrence and high noise resistance while practical fast data reading/writing is allowed. SOLUTION: A high-frequency current suppressor comprising a granular magnetic thin-film and the like is allowed to be an internal structure of a magnetic random access memory(MRAM) or is contained in at least a part of molding. |
申请公布号 |
JP2002064189(A) |
申请公布日期 |
2002.02.28 |
申请号 |
JP20000249452 |
申请日期 |
2000.08.21 |
申请人 |
TOKIN CORP |
发明人 |
ONO YUJI;YOSHIDA EIKICHI;MASUMOTO TOSHIAKI |
分类号 |
H01L27/10;G11C11/15;G11C11/16;H01F10/00;H01F10/16;H01F10/18;H01F10/32;H01L21/8246;H01L23/16;H01L23/552;H01L27/105;H01L43/08 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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