| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor element which can prevent failure of a photoresist pattern such as undercutting and footing which are to be caused by mutual mixing between an organic antireflection film and photoresist. SOLUTION: This forming method is provided with a step wherein the organic antireflection film 120 is formed in an upper part of a semiconductor substrate 100 and a hard baking is performed, a step wherein a curing is performed to the organic antireflection film 120 and a carbonized film 120' is formed on a surface of the film 120, a step wherein photoresist is spread on an upper part of the carbonized film 120' and a soft baking is performed, a step wherein an exposure and development is performed to the substrate on which the photoresist is spread and a photoresist pattern 140' is formed, and a step for cleaning resultant substance. |
