VARIABLE NEGATIVE DIFFERENTIAL RESISTANCE DEVICE COMPATIBLE WITH CMOS, AND ITS OPERATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a new NDR device which is similar to a tunnel diode showing negative differential resistance(NDR) and in which a tunneling between bands is not the only physical mechanism to negative differential resistance characteristic. SOLUTION: This semiconductor transistor device is a semiconductor transistor device including a threshold voltage which is dynamically changed and inverted. The threshold voltage can be controlled by using a control signal received with the semiconductor transistor device. The semiconductor transistor device can be operated by a negative differential resistance mode.