发明名称 Semiconductor integrated circuit for which high voltage countermeasure was taken
摘要 There are provided a plurality of CMOS configured pre-driver circuits, wherein an increased voltage obtained by increasing a power voltage is applied to a source of each P-channel transistor, and a word line driver circuit each having a P-channel transistor and an N-channel transistor to which an output of the pre-driver circuit is inputted. The source of each N-channel transistor in the plurality of pre-driver circuits is connected in common to that of each N-channel transistor in the word line driver circuit, and a source-drain path of an N-channel transistor for voltage alleviation is connected between this source common node and a node of a grounding voltage. The increased voltage is applied to a gate of the N-channel transistor for voltage alleviation.
申请公布号 US2002024876(A1) 申请公布日期 2002.02.28
申请号 US20010906116 申请日期 2001.07.17
申请人 KOHNO FUMIHIRO 发明人 KOHNO FUMIHIRO
分类号 G11C11/407;G11C8/08;H01L21/822;H01L27/04;(IPC1-7):G11C8/00 主分类号 G11C11/407
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