METHOD OF FABRICATING A DISTRIBUTED BRAGG REFLECTOR BY CONTROLLING MATERIAL COMPOSITION USING MOLECULAR BEAM EPITAXY

摘要

A distributed Bragg reflector for a vertical cavity surface emitting laser has a semiconductor material system including the elements aluminium, gallium, arsenic, and antimony. Accurate control of the composition of the semiconductor material system must be maintained to result in a distributed Bragg reflector suitable for use in a VCSEL. A method of fabricating the distributed Bragg reflector includes calibrating (20) the incorporation of at least one of the elements into the material system as different semiconductor materials are grown on a substrate (14, 22).