发明名称 HIGH CAPACITY MEMORY MODULE WITH HIGHER DENSITY AND IMPROVED MANUFACTURABILITY
摘要 A double-sided memory module (62) with improved memory device density and improved manufacturalibity, and with optional bus terminations (68) mounted directly on the memory module (62) for use with high speed, impedance-controlled memory buses (66). It also allows the same memory devices (46, 54 and 62) to be used on both sides of the card, instead of requiring memory devices (46, 54 and 62) with mirrored I/O connections on a second side as on prior art double-sided memory cards. The memory module (62) may be formed on a conventional printed circuit card using cost effective printed circuit board line widths and spaces with unpacked or packed memory chips (28) attached directly to the memory module (62). Using memory modules (46, 54 and 62) with bus terminations (68) improves the signal quality and integrity even further and therefore enhances system performance.
申请公布号 WO0217692(A1) 申请公布日期 2002.02.28
申请号 WO2001US25396 申请日期 2001.08.14
申请人 HIGH CONNECTION DENSITY, INC.;SLY, THOMAS, L.;QUINN, KEVIN, M. 发明人 SLY, THOMAS, L.;QUINN, KEVIN, M.
分类号 G06K19/077;G11C5/04;G11C5/06;H01L23/66;H05K1/02;H05K1/14;(IPC1-7):H05K1/14;G11C5/14 主分类号 G06K19/077
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