| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor chip for absorbing stress caused by a difference in coefficient of thermal expansion with an outer board. SOLUTION: A second insulating layer 236 has a double layered structure made up of an insulating layer 236A with relatively low coefficient of thermal expansion and an insulating layer 236B with relatively high coefficient of thermal expansion. Since there is a difference in coefficient of thermal expansion, a heat is generated at the operation of the semiconductor chip 30, but each stress is absorbed by the insulating layers 236A and 236B with different coefficient of thermal expansion.</p> |
