| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
After a polysilicon film 103 is formed, the RF plasma etching is applied to the surface thereof and thereby a natural oxidation film 104 on the surface of the polysilicon 103 is removed.
|
| 申请公布号 |
US2002025674(A1) |
申请公布日期 |
2002.02.28 |
| 申请号 |
US19990389496 |
申请日期 |
1999.09.03 |
| 申请人 |
KAWAHARA NAOYOSHI |
发明人 |
KAWAHARA NAOYOSHI |
| 分类号 |
H01L29/73;H01L21/28;H01L21/285;H01L21/302;H01L21/3065;H01L21/311;H01L21/3205;H01L21/331;H01L21/8249;H01L27/06;H01L29/732;(IPC1-7):H01L21/44 |
主分类号 |
H01L29/73 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
