发明名称 Semiconductor device
摘要 A semiconductor device comprises a substrate having at least first, second and third metal layers formed over it. The metal layers comprise parallel strips. The strips of a given metal layer may be arranged such that they extend in a direction perpendicular to that of the direction in which the strips of a metal layer immediately above or below the given metal layer extend. The strips may further be arranged in parallel bands. The metal layers may comprise repeating patterns of strips. They may further provide customization. Vias may be formed to provide connections between metal layers. Such vias and/or one or more of the metal layers themselves may be used to provide customization.
申请公布号 US2002024143(A1) 申请公布日期 2002.02.28
申请号 US20010940714 申请日期 2001.08.29
申请人 OR-BACH ZVI;COX BILL DOUGLAS 发明人 OR-BACH ZVI;COX BILL DOUGLAS
分类号 H03K19/177;(IPC1-7):H01L23/48 主分类号 H03K19/177
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