| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type cross linkage forming positive type photoresist composition having high resolution, excellent in etching resistance and capable of forming a resist pattern adaptable to a recent tendency to form a thinner film. SOLUTION: In the cross linkage forming positive type photoresist composition containing (A) a resin having alkali solubility increased by the action of an acid and (B) a compound which generates the acid when irradiated with radiation, the component (A) is a copolymer containing a constitutional unit of formula (a1) (where R is H or methyl), a constitutional unit of formula (a2) (where R is H or methyl), a constitutional unit of formula (a3) (where R1 is H or methyl, one of R2-R4 is a polycyclic saturated hydrocarbon group or two of R2-R4 form a polycyclic saturated hydrocarbon ring and the others are each lower alkyl) and a crosslinking type constitutional unit of formula (a4) (where R1 is H or methyl; R5 and R6 are each lower alkyli (n) is an integer of 1-3; and A is a single bond or a (n+1)-valent organic group). |
