| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film type semiconductor device excellent in characteristics. SOLUTION: This display device is provided with an N-channel type thin film transistor and a P-channel type thin film transistor. The N-channel type thin film transistor has a structure wherein a rear gate electrode is arranged on a substrate having an insulating surface, a semiconductor layer having an N-type impurity region is arranged via an insulating film in the state that the rear gate electrode is covered. Two gate electrodes including the rear gate electrode are arranged on the semiconductor layer via a gate insulating film, and the rear gate electrode is held at a zero or negative constant potential in the state overlapping with at least a part of the semiconductor layer. The P-channel type thin film transistor has a structure wherein a semiconductor layer having a P-type impurity region is arranged on a substrate having an insulating surface via an insulating layer, and a single gate electrode is arranged on the semiconductor layer via a gate insulating film. |
