| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an Si cantilever without damaging an Si substrate having membrane structure provided with a cavity in its lower part, even when an inside of a reaction chamber is evacuated. SOLUTION: In this cantilever manufacturing method for manufacturing the cantilever by working on the Si substrate, an Si layer is vertically etched from a face side where the cantilever of the Si substrate is formed by a high- density plasma etcher, at least one leak hole is drilled, a cavity is formed by etching vertically in a side opposed to the face side the cantilever of the Si substrate is formed, the leak hole is communicated with the cavity, the Si substrate is inserted into the reaction chamber for dry etching, the inside of the reaction chamber is evacuated, and the cantilever is manufactured by carrying out etching on the face side the cantilever of the Si substrate is formed.
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