发明名称 |
Process to make a tall solder ball by placing a eutectic solder ball on top of a high lead solder ball |
摘要 |
Within a method for forming a solder interconnection structure for use within a microelectronic fabrication, there is first provided a substrate having formed thereover a bond pad. There is then formed upon the bond pad a first solder interconnection layer. There is then formed over the first solder interconnection layer an annular solder non-wettable copper oxide layer which does not cover an upper dome portion of the first solder interconnection layer. There is then formed over the upper dome portion of the first solder interconnection layer and not upon the annular solder non-wettable copper oxide layer a second solder interconnection layer. |
申请公布号 |
US2002025599(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010941384 |
申请日期 |
2001.08.28 |
申请人 |
APTOS CORPORATION |
发明人 |
HO CHUNG W.;WANG TSING-CHOW |
分类号 |
H01L21/48;H01L21/60;H01L23/498;H05K3/34;(IPC1-7):H01L21/48 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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