| 摘要 |
There is provided a high-frequency semiconductor device having an amplifier circuit, which amplifier minimizes deterioration of a high-frequency characteristic and attains high thermal stability. A driver stage of a power amplifier is formed so as to assume a multi-stage configuration by means of connecting multi-finger HBTs in shunt with each other, each multi-finger HBT comprising a single emitter. An output stage is formed so as to assume a single stage configuration by means of connecting multi-finger HBTs in shunt with each other, each HBT comprising two emitters. As a result, while an increase in capacity of p-n junction between an emitter layer and a base layer of the driver stage is prevented, thermal nonuniformity arising in the output stage is minimized. Thus, a power amplifier as a whole is configured with high thermal stability without deterioration of a high-frequency characteristic of the power amplifier.
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